In Situ Investigations of Structures Evolution of Mg Doped Zn4Sb3

摘要：

　　The beta-phase of Zn4Sb3 has been regarded as a very promising thermoelectric material since middle nineties, owing to its unique merit: intermediate temperature region (200-400 ℃), made of cheap, non-toxic and abundant elements and high thermoelectric property.However, the thermal stability of Zn4Sb3 seems to be an inherent obstacle for the practical application during the working temperatures.Herein, magnesium doped Zn-Sb semiconductor (Mg0.04Zn3.96Sb3) was investigated thoroughly in-situ during thermal annealing up to 600 K, whilst both microstructure and electronic structures were recorded via the combination of synchrotron-based two dimensional X-ray diffraction techniques and the X-ray photoemission spectroscopy.While the time-resolved grazing incidence XRD reveals the preserved crystal structures during thermal annealing to 600 K, XPS measurement demonstrate the robustness of electronic structures.On basis of these findings, it was concluded in the end that the doping of magnesium significantly improves the thermal stability of zinc-antimonite compounds and introduces minor influence on the electronic structure of Zn-Sb alloy.Our study may propose an effective approach towards the wild application of Zn4Sb3 related thermoelectric materials.

关键词： XRD XPS Electronic structure Microstructure Thermal stability

作者: Yu Wang Hong Li Ying-guo Yang Geng-wu Ji Kong-chao Shen Hao-liang Sun Jiong Li Zheng Jiang Fei Song

作者单位: Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, China Faculty of information and computer Science, Ningbo University, Ningbo, China Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, China;Department of Ph

会议类型: 国际会议

会议名称: The 2016 China Functional Materials Technology and Industry Forum (2016中国国际功能材料大会暨第九届中国功能材料及其应用学术会议)

会议地点: 重庆

会议语种:英文

页码: 178-184

在线出版日期: 2016-07-25（万方平台首次上网日期，不代表论文的发表时间）