Plasma-enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

摘要：

　　Polycrystalline GaN thin films were successfully grown at low temperature (250 ℃) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor.The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer.It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100).The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3.The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate.The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality.The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1∶1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 floW rate on the nitrogen content of the thin films.

关键词： Polycrystalline GaN film Low temperature growth PE-ALD

作者: Wen-Hui Tang Yi Jia Bo-Cheng Zhang Chang-Wei Yang You-Zhi Qu Min Li Yang Xia

作者单位: School of Materials Science and Engineering, Shandong University of Science and Technology, China;In Jiaxing Microelectronic Equipment Research Center, Chinese Academy of Sciences, China School of Materials Science and Engineering, Shandong University of Science and Technology, China Institute of Microelectronics of Chinese Academy of Sciences, China;Jiaxing Microelectronic Equipmen

会议类型: 国际会议

会议名称: The 2016 China Functional Materials Technology and Industry Forum (2016中国国际功能材料大会暨第九届中国功能材料及其应用学术会议)

会议地点: 重庆

会议语种:英文

页码: 907-914

在线出版日期: 2016-07-25（万方平台首次上网日期，不代表论文的发表时间）