The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO∶Al Thin Films Deposited by Magnetron Sputtering
ZnO∶Al thin films were deposited on flexible substrates by magnetron sputtering.The effects of the carrier concentrations on the hall mobilities of AZO films were investigated.When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment.When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.
Thin films Sputtering Electrical properties Simulation and modeling Solar energy materials
Xiao-Jing Wang Yun Zhang
School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430074,China;Hubei School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430074,China
国际会议
The 2016 China Functional Materials Technology and Industry Forum (2016中国国际功能材料大会暨第九届中国功能材料及其应用学术会议)
重庆
英文
938-941
2016-07-25（万方平台首次上网日期，不代表论文的发表时间）