Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

摘要：

　　Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system.The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated.The dielectric properties of the thin films are investigated.The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric.Perovskite phase can be observed in the thin film annealed in oxygen at 750 ℃ for 30 min.A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique.The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6× 10-6 A/cm2 and 5.35 × 10-8 A/cm2 respectively.

关键词： BST Thin films RF magnetron sputtering Dielectric property

作者: Juan Li Cong-chun Zhang Yan-lei Wang Yang Gao Xiao-lin Zhao

作者单位: National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nan Laboratory of Precision Manufacturing Technology, Chinese Academy of Engineering Physics

会议类型: 国际会议

会议名称: The 2016 China Functional Materials Technology and Industry Forum (2016中国国际功能材料大会暨第九届中国功能材料及其应用学术会议)

会议地点: 重庆

会议语种:英文

页码: 942-946

在线出版日期: 2016-07-25（万方平台首次上网日期，不代表论文的发表时间）