Modeling and simulation for the distribution of the fluid and slurry particles in chemical mechanical polishing of silicon carbide
In order to fully understand the friction and wear mechanism of chemical mechanical polishing(CMP) process, three-dimensional CFD model considering multiphase flow and discrete phase was established to obtain the speed and pressure distribution of the slurry fluid as well as the slurry particles between wafer and polishing pad under the different processing conditions.It is found that the distribution of particle density is smaller when the film thickness is small and the speed of the polishing pad and wafer is great.Based on the distribution characteristics of the fluid velocity,pressure and slurry particles, the model of material removal rate(MRR) was established.The dynamic pressure caused by flowing particles on the surface asperity of the wafer during the polishing process was analyzed.By applying the fatigue fracture theory based on energy conservation, the MRR prediction model was established, which can be used quantitatively for all kinds of materials.For silicon carbide(SiC) polishing, its MRR under different processing conditions was obtained through Matlab programing.It is found that its MRR decreases as polishing continues, and the MRR is greater when the speed of polishing pad is great and the gap film thickness is small.
Chemical mechanical polishing CFD simulation.Slurry particle distribution Removal rate model
Wenjie Zhai Aoxiang Wang
Harbin Institute of Technology, Mechanic and Electronic Engineering, Harbin ,China
国际会议
上海
英文
217-220
2017-11-19（万方平台首次上网日期，不代表论文的发表时间）