Polishing characteristics of reaction-sintered silicon carbide by plasma-assisted polishing
The excellent properties of reaction-sintered silicon carbide (RS-SiC), such as high hardness, light-weight and high thermal conductivity, make it a very good candidate material for space telescope mirrors and molds for optical components.Chemical mechanical polishing (CMP) is widely used as a damage-free finishing technique for finishing of semiconductor wafers and optical components.However, the polishing efficiency of CMP for RS-SiC is very low and the cost of slurry used in CMP is very high.Plasma-assisted polishing (PAP), which is combined surface modification by plasma irradiation and removal of modified layer by using soft abrasive, was proposed to realize the highly efficient, low-cost and damage-free finishing of RS-SiC.To evaluate the polishing characteristics, PAP experiment using ceria grinding stone were conducted.
reaction-sintered silicon carbide plasma-assisted polishing modified layer soft abrasive ceria grinding stone damage free
Rongyan Sun Kentaro Tsujiuchi Yuji Ohkubo Katsuyoshi Endo Kazuya Yamamura
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering,Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
国际会议
上海
英文
241-244
2017-11-19（万方平台首次上网日期，不代表论文的发表时间）