The relationship between anodic oxidation rate and electric potential in electrochemical mechanical polishing of 4H-SiC (0001)
Single crystal SiC (4H-SiC) is considered as a promising next-generation semiconductor power-device material because of its excellent electronic and thermal properties, such as wide band gap, high breakdown field, and high thermal conductivity.At present, chemical mechanical polishing (CMP) is widely used for the finishing process of device grade SiC wafer, but its material removal rate (MRR) is very low and waste treatment of slurry is very expensive.So we proposed electrochemical mechanical polishing (ECMP), it has higher MRR and lower cost.In ECMP process,SiC is softened by anodic oxidation and the softened layer is removed by soft abrasives immediately.Therefore, investigation of the anodic oxidation rate of SiC is essential to obtain smooth surface in ECMP because the balance between oxidation rate and polishing rate is a decisive factor on the surface roughness.In this study, 4H-SiC was anodically oxidized under different electric potentials,and the relationship between oxidation rate and potential was investigated.
4H-SiC electrochemical mechanical polishing electric potential anodic oxidation rate
Xu Yang Yuji Ohkubo Katsuyoshi Endo Kazuya Yamamura
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering,Osaka University, Address: 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
国际会议
上海
英文
245-248
2017-11-19（万方平台首次上网日期，不代表论文的发表时间）