Fabrication of High-k Dielectric Composites by Tuning the Induced Polarization of Si-based Semiconductor Fillers
Interface polarization and interface zone have been widely utilized to account for the abnormally improved dielectric properties of composites although their formation is rather vague and their influence has never been directly measured.Induced polarization shows a significant influence on dielectric permittivity of 0-3 polymer composites containing Si-based semi-conductive fillers.The nature of induced polarization is increased electric conductivity or decreased band gap in Si-based semi-conductive fillers.In this work, the dependence of induced polarization onto particle size of α-SiC filler together with polarity of polymer matrix and Si-based semi-conductive filler has been elaborately investigated by detecting the permittivity of composites.It was found that increasing the grain size of SiC filler, improving the polarity of polymer matrix and reducing the polarity of Si-based semi-conductive filler could favor the enhancement of the overall induced polarity in the composites.As a result, the significantly improved dielectric permittivity of composites higher than both of the neat polymer and filler was observed depending on the constituents of the composites.The highest dielectric permittivity of～215@1 kHz was achieved in poly(vinyl alcohol) based composite filled with 60 vol％ of 12 m SiC particles.The dielectric permittivity of these 0-3 composites could be well tuned in a wide range through altering their constituents.This work might open a facile route to obtain the promising high-performance dielectric composite materials by regulating the degree of induced polarization.Some key results were obtained as shown in Fig.1.
Yefeng Feng Zhicheng Zhang
Department of Applied Chemistry, School of Science, Xian Jiaotong University, 710049
国际会议
9th International Symposium on High-Tech Polymer Materials(第9届国际高技术高分子材料学术会议)(HTPM-9)
郑州
英文
22-22
2016-07-11（万方平台首次上网日期，不代表论文的发表时间）