Nonvolatile Resistive Switching Memory Device Based on Sulfonated Polyaniline/Graphene Oxide Nanocomposite
Organic bistable resistive switching device has attracted much attention as a promising next-generation nonvolatile memory owing to its good scalability, simple structure, high density and fast switching.Recently, various kinds of conjugated-polymer-functionalized graphene oxide (GO) sheets nanomaterials have been designed and synthesized for fabricating memory devices.These devices exhibited good bistable electrical switching and nonvolatile memory effect, but the chemical synthesis of graphene derivatives or device fabrication processes were often complicated.In this work, we present a simple approach for fabricating an organic bistable device based on sulfonated polyaniline (SPANI)-GO composite, in which the composite was prepared by simple mixing SPANI with GO in water, and the single active layer (80 nm in thickness) memory device of ITO/SPANI-GO/Al with cross-point configuration was fabricated by spin-coating.The morphology and the degree of dispersion of composites were studied by atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM).The current-voltage characteristics of the fabricated devices show different electronic memory behaviors, such as conductor behavior, write-once-read-many-times (WORM) memory effect and rewritable memory effect, depending on the content of GO in the SPANI-GO composites.The device with 0.5 wt％ GO in composite is always in a single high-conductivity state without conductance switching behavior.The device with 5 wt％ GO in composite exhibits WORM memory behavior with a turn-on voltage of about 2.0 V and an ON/OFF current ratio of 104.The device with 10 wt.％ GO in composite exhibited typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of 2.3 V and an ON/OFF-state current ratio of 103.As the content of GO was increased from 10％ to 30％, the turn-on voltage increased and the ON/OFF current ratio decreased.Moreover, the devices reported here are highly reproducible and shows a high performance even after being stored in air for over a month.The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the charge trapping, transfer, and distrapping between SPANI and GO nanosheets.
Shuhui Miao Li Zhang Shaokui Cao
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
国际会议
9th International Symposium on High-Tech Polymer Materials(第9届国际高技术高分子材料学术会议)(HTPM-9)
郑州
英文
133-134
2016-07-11（万方平台首次上网日期，不代表论文的发表时间）