会议专题

Nonvolatile Resistive Switching Memory Properties in Reduced Graphene Oxide Noncovalently Functionalized with Rhodamine B

Graphene, a one-atom thick graphite sheet, can be considered as a promising 2D nanomaterial for building attractive resistive switching memory device due to its extraordinary electronic and mechanical properties.So far various kinds of nanomaterials based on graphene or graphene-based hybrid systems have been reported for exhibiting the typical nonvolatile resistive switching memory effect as applying in the electrical memory device.In this work, the partially reduced GO (reduced by nontoxic ascorbic acid) was noncovalently functionalized with Rhodamine B (RhB) through π-π interaction between the conjugated structure of them.Due to the modification of RhB, the rGO-RhB composite exhibited good dispersibility in organic solvent such as N-Methyi-2-pyrrolidinone (NMP), which make it easy to fabricate the thin active layer by spin-coating technique, and then to assemble the sandwich memory device ITO/rGO-RhB/Al.The primary resistive switching properties of the resulting ITO/rGO-RhB/Al device was evaluated by the current-voltage (Ⅰ-Ⅴ) characteristics, and the results showed that this device exhibited the nonvolatile rewritable memory effect, with a turn-on voltage of about 2.5 V and an ON/OFF-state current ratio of 103.The possible electrical switching mechanism between the OFF and ON states is attributed to charge accumulation rupture and formation of conducting filaments.Our experimental results indicate that rGO-RhB is potentially useful for future nonvolatile memory applications.

Jiankui Zhou Shuhui Miao Li Zhang Shaokui Cao

School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China

国际会议

9th International Symposium on High-Tech Polymer Materials(第9届国际高技术高分子材料学术会议)(HTPM-9)

郑州

英文

161-161

2016-07-11(万方平台首次上网日期,不代表论文的发表时间)