Effect of Temperature Schedule on The Morphology of SiC Made from Graphite and Silicon Powder
SiC whiskers were synthesized in coke bed using a two-step heat treatment process.The temperature was held for 3 h at 1200℃ before heating to 1430℃ for 3 h.The morphologies of SiC synthesized by the two-step heat treatment method were much more different from those produced by direct heating to 1430℃.SiC whiskers formed at 1200℃ firstly and grew at 1430℃ to obtain a mean diameter about 326 nm, while the SiC grains with a size range from 0.70 to 2.30μm were obtained by direct heating to the target temperature of 1430℃.This was explained by different formation mechanism.The result proposes a promising alternative technical process for whisker-reinforced ceramic/refractory composites in-situ during sintering.
silicon carbide whiskers microstructure formation mechanism
CHEN Junfeng LI Nan YAN Wen WEI Yaowu HAN Bingqiang
The Key State Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,PR China
国际会议
西安
英文
1-5
2016-09-20（万方平台首次上网日期，不代表论文的发表时间）