High Sensitivity Horizontal Hall Sensors in 0.35 μm BCD Technology

摘要：

　　In this paper,we designed a group of horizontal Hall sensors in 0.35 μm BCD (bipolar/CMOS/DMOS) technology.Compared with the existing Hall devices,the design has improvement in parts such as Hall cell parameter set and layout design under BCD technology.And then the Hall chip is taped out.The results from the precise experiment of the Hall cell verify the optimization method which can be used to realize Hall sensitivity of 964 V/(AT).

关键词： Horizontal Hall sensors 0.35um BCD technology layout Hall sensitivity

作者: Zhenyan Zhang Fei Lyu Shuzhuan He Li Li Jin Sha Hongbing Pan Zexia Zhang Yifan Pan

作者单位: School of Electronic Science & Engineering Nanjing University Nanjing 210093, China Nanjing Foreign Language School Nanjing 210008, China

会议类型: 国际会议

会议名称: 2015 Fifth International Conference on Instrumentation and Measurement,Computer,Communication and Control (IMCCC2015)(第五届仪器测量、计算机通信与控制国际会议)

会议地点: 秦皇岛

会议语种:英文

页码: 510-514

在线出版日期: 2015-09-18（万方平台首次上网日期，不代表论文的发表时间）