THIN FILM PIEZOELECTRIC DEVICES INTEGRATED ON CMOS

摘要：

In this paper we present the demonstrated results on the integrated TFSAW resonance designed to be at 300MHz with an amplifier fabricated using “SilTerra MEMS on CMOS process platform.The same process platform has been extended for the bulk acoustic mode resonator with a vacuum sealed thin film encapsulation.The thin film encapsulated FBAR device resonance is designed to be at 4.6 GHz.

关键词： Thin film Surface Acoustic Wave Thin film Bulk Acoustic Wave Aluminium Nitride Thin flim encapsulation

作者: Mohanraj SOUNDARA PANDIAN Eloi MARIGO FERRER Wee Song TAY Venkatesh MADHAVEN Arjun Kumar KANTIMAHANTI Guillermo SOBREVIELA Arantxa URANGA Nuria BARNIOL

作者单位: SilTerra Malaysia Sdn Bhd, Lot 8, Phase 2, Kulim Hi-Tech Park, Kulim, Kedah, 09000, Malaysia Universitat Autonoma de Barcelona, Q building, UAB campus, Bellaterra, Barcelona, 08193, Spain

会议类型: 国际会议

会议名称: The 2016 Symposium on Piezoelectricity,Acoustic Waves and Device Applications(2016全国压电和声波理论及器件技术研讨会)

会议地点: 西安

会议语种:英文

页码: 167-170

在线出版日期: 2016-10-21（万方平台首次上网日期，不代表论文的发表时间）