Design and Fabrication of Graphene Field-Effect Transistor with Buried-Metallic-Gate for Liquid-Phase Nanosensing
Background:Since the discovery in 2004,graphene has become a hot-spot on the horizon of material researches.Its unique structure consisting of carbon atoms strictly arranged in a single-layered hexagonal crystalline form offers graphene plenty of exceptional physicalproperties1.
Cheng Wang Yijun Li Miao He
State Key Joint Laboratory of Environmental Simulation and Pollution Control ;Research Center of Environmental and Health Sensing Technology, Tsinghua University, Beijing 100084,China
国际会议
北京
英文
86-87
2015-11-02(万方平台首次上网日期,不代表论文的发表时间)