Transient Response Analysis of a MESFET Amplifier Illuminated by an Intentional EMI Source
Unintentional as well as intentional electromagnetic interference can cause improper functionality of microwave circuits or systems.In this paper, our attention is focused on transient response characterization of microwave MESFET amplifiers, which are used widely in the integration of communication circuits and systems, under the impact of an intentional electromagnetic interference(IEMI) source but with different waveforms, respectively.The mathematical treatment is based on two-port lumped networks FDTD method.Parametric studies are carried out to shows effects of the EMI waveforms, its magnitudes on the transient coupled voltages on the input-output of the microwave MESFET amplifiers, with sufficient information obtained for understanding the interaction between the IEMI source and the microwave MESFET amplifier.
Electromagnetic pulses (EMP) microwave amplifier MESFET device two-tort lumped-network FDTD
Oi-Feng Liu Jing-WeiLiu Chong-Hua Fang
Science and Technology on EMC Laboratory, Wuhan, China Wuhan Wuda Jucheng Strengthening Industrial Co.Ltd, Wuhan, China
国际会议
2013 International Symposium on Antennas and Propagation(2013天线与传播国际会议)
南京
英文
997-1000
2013-10-23（万方平台首次上网日期，不代表论文的发表时间）