Crosstalk Analysis of Through Silicon Vias With Low Pitch-to-diameter ratio in 3D-IC

摘要：

　　An equivalent circuit model for low pitch-todiameter ratio (P/D) through silicon via (TSV) in threedimensional integrated circuit (3-D IC) is proposed in this paper.The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array.The metal-oxidesemiconductor (MOS) capacitance of TSV is also considered.With this model, the crosstalk of TSV array can be fully analyzed regardless of the pitch.The results by this model agree well with those by the electromagnetic simulations up to 40GHz.

作者: Sheng Liu Jianping Zhu Yongrong Shi Xing Hu Wanchun Tang

作者单位: School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing Department of Communication Engineering, Nanjing Normal University, Nanjing 210023, China

会议类型: 国际会议

会议名称: 2013 International Symposium on Antennas and Propagation(2013天线与传播国际会议)

会议地点: 南京

会议语种:英文

页码: 1001-1004

在线出版日期: 2013-10-23（万方平台首次上网日期，不代表论文的发表时间）