Characteristics of Nitride Devices Prepared by Pulsed Sputtering

摘要：

　　We will compare basic characteristics of nitride devices prepared by pulsed sputtering deposition (PSD) with those by MOCVD and we will show that low growth temperature of PSD is quite advantageous for fabrication of various devices.

作者: Hiroshi Fujioka

作者单位: The University of Tokyo,Meguro-ku,Tokyo,Japan;JST,Chiyoda-ku,Tokyo,Japan

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-2

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）