AlGaN/GaN Nanostructures for UV Light Emitting Diodes

摘要：

　　UV LED efficiencies still need improvements and the potentials of (Al,Ga)N-based nanostructures as UV emitters are investigated.The main parameters leading to nanostructures emitting at shorter wavelengths are presented.LED properties are shown and discussed.

作者: J Brault D Rosales T Bretagnon B Gil B Damilano M Leroux A Courville S Chenot G.Randazzo P Vennéguès P DeMierry J Massies

作者单位: CNRS-CRHEA,Rue Bernard Grégory,06560 Valbonne,France CNRS-Université Montpellier 2,Laboratoire Charles Coulomb and Université Montpellier 2,UMR 5221,3409

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）