Selective area growth of GaAs on silicon

摘要：

　　The epitaxial growth of GaAs on patterned Si(001) substrates by MOCVD is presented.Effect of growth temperature and V/III ratio on coalescence is investigated.Meanwhile,changing total pressure can reduce the polycrystals generated on mask.

作者: Yunrui He Jun Wang Can Deng Haiyang Hu Qi Wang Yongqing Huang Xiaomin Ren

作者单位: State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Beijing 100876,Peoples Republic of China

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）