Non Polar GaN and (Ga,In)N/GaN Heterostructures Grown On A-Plane (11-20) ZnO Subtrates

摘要：

　　Non polar GaN is grown on (11-20) ZnO substrates by molecular beam epitaxy.The GaN quality is strongly improved by using a nitrogen plasma source for the buffer layer.Room temperature blue emitting (In,Ga)N/GaN quantum wells are demonstrated.

作者: A.Ogereau J.Brault Y.Xia B.Damilano M.Leroux M.Nemoz P.Vennegues M.Teisseire J.M.Chauveau

作者单位: CRHEA-CNRS,Rue Bernard Grégory,06560 Valbonne,France;University of Nice Sophia-Antipolis,06103 Nice, CRHEA-CNRS,Rue Bernard Grégory,06560 Valbonne,France

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）