1060-nm single-mode DFB Laser with Improved Ridge Etch Depth Tolerance

摘要：

　　We report a novel 1060-nm ridge waveguide high-power DFB laser,with a large optical cavity optimized for relaxing etched-depth processing tolerance,GaAs/AlGaAs grating for simplifying material growth and double-trench lateral leaky waveguide for mode stability.

作者: Shaoyang Tan Teng Zhai Dan Lu Wang Wei Ruikang Zhang Chen Ji

作者单位: Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,PO Box 912,Beijing 100083,Peoples Republic of China

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）