Direct Growth of GaAs-based Long-wavelength (1.55μm) InGaAs/InGaAsP Multiple Quantum Wells Laser

摘要：

　　InGaAs/InGaAsP multiple quantum wells laser structures materials are grown on semi-insulating GaAs substrates by MOCVD.A threshold current of 340mA and a slop efficiency of 0.29mW/mA are obtained for a device with 12μm-wide strip.

作者: Xibo Li Yongqing Huang Jun Wang Xiaofeng Duan Ruikang Zhang Xiaomin Ren Xia Zhang Qi Wang

作者单位: State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sci

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）