Growth of large size Ti:A12O3 crystal by Heat Exchanger Method

摘要：

　　Large size Ti-sapphire single crystals have been grown by the Heat Exchanger Method (HEM).The present result shows that it is possible to grow Ti-doped Al2O3,160 mm in diameter by the HEM growth technology.

作者: Jigang Yin Kaijie Ning Youchen Liu Lianhan Zhang Peixiong Zhang Jiaqi Hong Yaqi Wang Yin Hanga

作者单位: Key Laboratory of High Power Laser Materials,Shanghai Institute of Optics and Fine Mechanics,Chinese Key Laboratory of High Power Laser Materials,Shanghai Institute of Optics and Fine Mechanics,Chinese

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）