Intersubband Transition in AlGaN/GaN step quantum wells at 3-5μm

摘要：

　　We demonstrate intersubband absorptions and photocurrent response at wavelength of 3-5μm in nitride-based semiconductor step quantum wells.The structures consist of a 1.8nm thick Al0.5Ga0.5N barrier,a 1.8nm thick GaN well and a 16nm thick Al0.25Ga0.75N step barrier.With this approach,one can create a virtually flat band potential energy profile in the step barrier layers,which is confirmed by analysing the temperature dependence dark current results.

作者: Xin Rong Xinqiang Wang Guang Chen Ping Wang Xiantong Zheng Fujun Xu Bo Shen

作者单位: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）