Analysis of Recombination Mechanisms in InGaN-Based Light-Emitting Diodes from Electrical and Optical Characterizations

摘要：

　　Various techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed.Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods.

作者: Dong-Soo Shin

作者单位: Department of Applied Physics and Department of Bionano Science,Hanyang University,ERICA Campus,Ansan,Gyeonggi-do 426-791,Korea

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）