Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes

摘要：

　　Experimental efficiency droop phenomena have been consistently explained by the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current.

作者: Jong-In Shim Hyunsung Kim Dong-Soo Shin

作者单位: Dept.of Electronics and Communication Engineering,Hanyang University ERICA Campus Dept.of Applied Physics,Hanyang University ERICA Campus

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）