GaN Nano-membrane for Optoelectronic and Electronic Device Applications

摘要：

　　The~25nm thick threading dislocation free GaN nanomembrane was prepared using ultraviolet electroless chemical etching method offering the possibility of flexible integration of (Al,In,Ga)N optoelectronic and electronic devices.

作者: Boon S.Ooi Rami T.ElAfandy Ahmed B.Slimane M.Abdul Majid Tien Khee Ng

作者单位: Photonics Laboratory,King Abdullah University of Science and Technology(KAUST),Thuwal 21534,Saudi Arabia

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）