Heteroepitaxial growth and characterization of compound semiconductors

摘要：

　　ZnTe layers were successfully grown on (0001) sapphire and GaAs substrates by metalorganic vapor phase epitaxy.The emission of THz radiation with a spectral distribution up to 40 THz was observed from the ZnTe layers.The structural and optical properties of the obtained ZnTe layers were reported.

作者: Qixin Guo

作者单位: Synchrotron Light Application Center,Department of Electrical and Electronic Engineering,Saga University,Saga 840-8502,Japan

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）