Optical Gain and Absorption of 420 nm InGaN-based Laser Diodes Grown on m-Plane GaN Substrate

摘要：

　　Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2cm-1.

作者: Chao Shen Tien Khee Ng Bilal Janjua Ahmed Y.Alyamani Munir M.El-Desouki James S.Speck Steven P.DenBaars Boon S.Ooi

作者单位: Photonics Laboratory,King Abdullah University of Science and Technology(KAUST),Thuwal,23955-6900,Sau King Abdulaziz City for Science and Technology(KACST),Riyadh,11442-6086,Saudi Arabia Materials Department,University of California,Santa Barbara,CA 93106-5050,USA

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）