Electrically Injected InGaN/GaN Disk-in-Nanowire Lasers Monolithically Grown on (001) Silicon

摘要：

　　The growth and characteristics of a monolithically grown,electrically injected InGaN/GaN disk in nanowire edge emitting green laser (λ= 533 nm) operating at room temperature are demonstrated.

作者: Thomas Frost Shafat Jahangir Ethan Stark Pallab Bhattacharya

作者单位: Center for Photonics and Multiscale Nanomaterials,Department of Electrical Engineering and Computer Science,University of Michigan,Ann Arbor,MI 48109,USA

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）