Epitaxy of InGaN random and digital alloys towards solar cells

摘要：

　　Absorption of InGaN alloy with graded In composition nearly perfectly matches the solar spectrum and is a good candidate for solar cell.Unfortunately,epitaxy and doping of p-type InGaN,in particular the high In composition is difficult.In this talk,we will report the growth of random InGaN alloy.In addition,to improve crystalline quality of InGaN,digital InGaN alloy is proposed and the experimental result will be reported as well.

作者: Xinqiang Wang Xiantong Zheng Dingyu Ma Ping Wang Xing Rong Bo Shen

作者单位: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing,100871 China Collaborative Innovation Center of Quantum Matter,Beijing,China

会议类型: 国际会议

会议名称: 2014 Asia Communications and Photonics Conference(ACP2014)(2014亚洲通信与光子学大会)

会议地点: 上海

会议语种:英文

页码: 1-3

在线出版日期: 2014-11-11（万方平台首次上网日期，不代表论文的发表时间）