3E & A College, Hebei Normal University of Science & Technology, Hebei 066004, China
A Ka-band monolithic low noise amplifier (LNA) has been designed using a 0.1-μm gate length InGaAs pseudomorphic high electron-mobility transistor (pHEMT) process.The source inductors are adjusted to achieve best tradeoff among gain,return loss and noise figure.And the matching network is also carefully designed to get a compact chip size (1.4mm×0.75mm) besides keeping the circuit stable in lower frequency band than operating band.The simulated results of this chip show a gain of more than 13.1dB,a noise figure of less than 2.35dB,an input return loss of greater than 18dB,and an output return loss of greater than 18dB in the frequency range of 32.5 to 36.5GHz.
Ka-band LNA monolithic microwave integrated circuits (MMIC) pHEMT
Haodong Lin Weichuan Zhang Jun Dong Hao Peng Yu Liu Ziqiang Yang Tao Yang
School of Electronic Engineering, University of Electronic Science and Technology of China Chengdu Sichuan Province, China, 611731
国际会议
重庆
英文
171-174
2015-12-19（万方平台首次上网日期，不代表论文的发表时间）