Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes

摘要：

　　For Geiger-mode avalanche photodiodes, a statistical method is advanced to establish the quantitative correlation between the controllability of structure parameters and the homogeneity of device properties. Setting many parameters fluctuating independently and simultaneously, the collective effect of multi-parameters can be straightly obtained. For a typical InGaAsP/InP single-photon avalanche diode, it is seen that device homogeneity with excess bias fluctuation within 50% requires uncertainty in layer thickness and doping level better than ~3%.

关键词： Optoelectronic device avalanche photodiode single photon avalanche diode

作者: Qian Dai Jie Deng Zhu Shi Li-Bo Yu Hai-Zhi Song

作者单位: Southwest Institute of Technical Physics, Section 4-7, Renminnan Road, Chengdu, China Southwest Institute of Technical Physics, Section 4-7, Renminnan Road, Chengdu, China;Institute of F

会议类型: 国际会议

会议名称: 2015 Joint International Mechanical,Electronic and Information Technology Conference(JIMET 2015)(2015 联合国际机械,电子与信息技术国际会议)

会议地点: 重庆

会议语种:英文

页码: 963-966

在线出版日期: 2015-12-18（万方平台首次上网日期，不代表论文的发表时间）