Study of Electrical and Physical Properties of PrxAl2-xO3 as Metal-oxide-semiconductor Gate Dielectric

摘要：

　　The electrical and physical properties of PrxAl2-xO3 on metal-oxide-semiconductor gate dielectric were investigated.Amorphous PrxAl2-xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm,respectively.Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500 0C annealing.The films still remained amorphous after 900 0C annealing for 5 min.A mixture of Pr,Al,O and Si observed at the interface between the film and the substrate was argued to be Pr-Al-silicate.Post-annealing is demonstrated to be essential for the films in order to get good electrical property.

关键词： PrxAl2-xO3 high-k gate dielectrics CMOS integration electron-beam evaporation

作者: Ziming Zhang Huiqin Ling Ming Li

作者单位: The State Key Laboratory of the Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai,P.R.China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 266-269

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）