Stress Control of Plasma Enhanced Chemical Vapor Deposited SiO2 Film in Through Silicon Via Process

摘要：

　　Through silicon via is an essential element for three dimension integration.Excessive stress have potential effects on the reliability of the structure.One concern is the peeling problem of SiO2 layer.It was found that it is caused by the electroplated copper during later solder reflow process.We also found that it is possible to ameliorate the peeling problem by increasing the compressive stress in the SiO2.We found that the peeling problem is solved when SiO2 was deposited with higher compressive stress.Compared to 90%peeling off for compressive stress-20 MPa in the SiO2,Only 20%peeling off for compressive stress-40 MPa in the SiO2 and no peeling off for compressive stress-110 MPa and-150 MPa in the SiO2.

关键词： Stress SiO2 TSV peeling

作者: Wenguo Ning Qiang Zhao Kai Zheng Dong Chen Hongyan Guo Li Zhang Zhengxun Hu K.H.Tan C.M.Lai

作者单位: Jiangyin Changdian Advanced Packaging Co.,LTD Jiangyin,Jiangsu

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 313-316

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）