Study of the return loss performance of an improved TSVs structure

摘要：

　　With the development of the integrated circuits,there is an inevitable trend in the development of the electronics industry,that the electronic devices become much smaller in shape,and integrated with higher density within,and more and more functionality.3D SIP(System in Package)has become the mainstream technology for the microsystem integration.Meanwhile,the through silicon via(TSV)is the core to the 3D SIP and even to the three-dimensional integrated circuit(3D IC).In this paper,an improved TSVs structure is put forward and analyzed in this paper.We used finite element method simulation to illustrate the return loss performance.And the results dedicates that the return loss performance of the improved TSV structure is better than traditional TSV.And some factors that affect the performance of the improved TSV have been analyzed.

关键词： 3D intergration TSV return loss

作者: Zuo Guoyi Miao Min

作者单位: Information Microsystem Institute,Beijing Information Science and Technology University No.35,North Fourth Ring Road,Chao Yang District,Beijing 100101,P.R.China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 466-469

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）