Electromigration Reliability Evaluation in FCBGA Package Based on Orthogonal Experimental Design

摘要：

　　Electromigration(EM)in solder joints under high current density has become a critical reliability issue for the future high density microelectronic packaging.A practical method of atomic density integral(ADI)for predicting solder bump electromigration reliability is proposed in this paper.The driving forces electromigration includes electron wind force,stress gradients,temperature gradients,as well as atomic density gradient.The electromigration simulation is performed on FCBGA package based on ADI method,and the simulation results for void generation and time to failure(TTF)have a reasonably good correlation with the testing results.Orthogonal experimental design has been used to evaluate the effect of design parameter on TTF of electromigration.Based on this study,some practical recommendations are made to optimize the package design and improve the solder bump electromigration reliability.

关键词： electromigration atomic density integral method time to failure orthogonal experimental design

作者: Yuanxiang Zhang Lihua Liang Richard Rao

作者单位: College of Mechanical Engineering Quzhou University Quzhou,China College of Mechanical Engineering Zhejiang University of Technology Hangzhou,China Vitesse Semiconductor Corporation 4721 Calle Carga,Camarillo,California,USA

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 630-636

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）