The investigation of board-level vibration for the stacked memory device

摘要：

　　The stacked memory device that combined eight single memory units in the vertical direction was investigated in this study when the device was subjected to the random vibrations.The fine computational model of the stacked memory with eight units assembled on board-level was built by ANSYS.The modal analysis was carried out first.By applying the power spectrum according to the GJB-548B standard,the stress and strain distributions of the board-level assembly of the stacked memory device under vibration test conditions were analyzed by the finite element analysis.The critical locations of the board-level structure under vibration were identified.The analysis revealed the stress and strain are higher in critical solder joints,which may shorten the life of the joints.The design suggestions for the structure based on the parametric studies were achieved finally.

关键词： POP random vibration FEA

作者: Xiao Li Jun Wang Liyou Zhao

作者单位: Department of Materials Science Fudan University Shanghai,P.R.China Shanghai Academy of Aerospace Technologye Shanghai,P.R.China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 728-733

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）