Reactive ion etching characteristics of partially-cured benzocyclobutene

摘要：

　　This paper reports the reactive ion etching(RIE)characteristics of partially-cured benzocyclobutene(BCB)in sulrur-hexafluoride/oxygen(SF6/O2)plasmas.The etching rate and etch anisotropy are mainly dependent on RF power,chamber pressure,and SF6 concentration.The processing parameters are investigated ranging from 50 to 200W,22.5 to 270 mTorr,and 0%to 80%,respectively.According to the experiments,the BCB etching rate increases with RF power and chamber pressure,but decreases when the SF6 concentration increases.We can achieve anisotropic etching using large RF power,high chamber pressure and high SF6 concentration.Grass-like residue happens at low pressures,large power and low SF6 concentration conditions.We also investigate the etching mechanisms of the dependence of the etching characteristics on the processing parameters.

关键词： Benzocyclobutene(BCB) Etching rate RIE Anisotropy

作者: Yang Yang Zhen Song Yuxin Du Zheyao Wang

作者单位: Institution of Microelectronics,Tsinghua University Beijing,China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 862-866

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）