Residual stress measurement of the ground wafer by Raman Spectroscopy

摘要：

　　The residual stress in ground wafers will induce wafer warpage and reduce the strength of thinned wafers.The residual stress distribution in ground wafers are investigated by Raman micro-spectroscopy in this paper.The results show that there is compressive stress in ground wafers and the stress distribution is not uniform.In addition,the residual tensile stress exists on rough ground wafer surface.The scanning electron microscopy images of ground wafers indicate that wafer surface materials are removed mainly by the brittle fracture mode during rough grinding process but by the ductile mode during fine grinding process.

关键词： ground wafers rotation grinding method residual stress Raman spectroscopy

作者: SUN Jinglong QIN Fei REN Chao WANG Zhongkang TANG Liang

作者单位: College of Mechanical Engineering and Applied Electronics Technology,Beijing University of Technolog CETE Beijing Electronic Equipment Co.,Ltd Beijing,China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 867-870

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）