Subsurface Damage Distribution of Ground Silicon Wafers

摘要：

　　The subsurface damage(SSD)distributions in different crystal orientations and radial locations of silicon wafers(100)are analyzed through cross-section microscopy method.The experimental results show that the subsurface damage depth is non-uniform in the ground wafer.Along the radial direction,the subsurface damage depth increases from the center to the edge of the wafer,and the depth in <110> crystal orientation is larger than that in <100> crystal orientation.

关键词： silicon wafers grinding subsurface damage distribution

作者: YAN Debao QIN Fei SUN Jinglong WANG Zhongkang TANG Liang

作者单位: College of Mechanical Engineering and Applied Electronics Technology,Beijing University of Technolog CETE Beijing Electronic Equipment Co.,Ltd Beijing,China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 871-873

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）