Modeling and simulation of silicon wafer backside grinding process

摘要：

　　TSV(through silicon via)is regarded as a key technology for 2.5D and 3D electronic packaging.And the manufacturing of the through silicon interposer is very challenge and costly.In the backside process of interposer,grinding is considered as the most promising technology to control wafers surface roughness and surface defect.In this paper,according to the grinding process,a mathematical model is established.According to the model,MATLAB is used to simulate and predict the grinding marks and the distance between two adjacent grinding lines during the backside grinding process.The grinding marks of the half contact grinding model and full contact grinding model with different wheel rotation speed and wafer rotation speed are presented.And the relationship between two adjacent grinding lines and the ratio of wafer rotation speed and wheel rotation speed is predicted.The experiments are also carried out to verify the proposed model.The results of the experiments agree well with the simulation results.

关键词： grinding marks backside grinding silicon wafer grinding surface control

作者: Zhaoqiang Li Xiangmeng Jing Feng Jiang Wenqi Zhang

作者单位: National Center for Advanced Packaging Wuxi China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 874-877

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）