A Novel Modeling of TSV MOS Capacitance by Finite Difference Method

摘要：

　　This paper proposed a novel modeling of the TSV MOS capacitance by finite difference(FD)method without the assumption of the full depletion approximation(FDA).The potential distribution in the oxide liner and depletion region can be obtained by FD with only one iteration.With the potential distribution,the TSV capacitance-voltage(C-V)characteristics can be easily obtained and good agreements are achieved with other references.

关键词： Finite difference (FD) method Through-silicon via (TSV) Capacitance-voltage characteristics

作者: Cheng Huang Sheng Liu Jianping Zhu Wanchun Tang Wei Zhuang

作者单位: Nanjing University of Science and Technology Nanjing,China Nanjing Normal University Nanjing,China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 881-884

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）