Electromigration-induced failure mechanism and lifetime prediction in NiCu Thin Film
NiCu is one of the widely used thin-film materials,which is now commonly used as sensor and resistor in very-largescale-integration(VLSI)because of its high resistivity and stability.However,with the scale decreasing and the temperature increasing in service condition,the limited reliability of NiCu thin-film material has been a key issue in microelectronics and packaging industry mainly due to the current induced electromigration(EM).In this paper,a sandwich-like NiCu thinfilm resistor(Ta/NiCu/Ta)with the thickness of 120 nm was fabricated on the glass substrate by sputtering technique.The resistance of the thin-film structure was proved to increase with time during test.The mean-time-to-failure(MTTF)analysis based on the Blacks equation found that the activation energy(Ea)was 0.99 eV and the model parameter for current density of Blacks equation was close to 3.Additionally,multi-voids were observed in the thin-film,which can be explained by the Ni diffusion along the barrier layers of Ta crystals.The results in this study proved that multi-voids formation by Ni diffusion is the main reason that leads to EM failure.
Electromigration Thin Film NiCu TEM
Yanjun Xu Lin Huang Guang Chen Fengshun Wu Weisheng Xia Hui Liu
College of Materials Science & Engineering Huazhong University of Science & Technology Wuhan,China
国际会议
The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)
成都
英文
1071-1074
2014-08-12（万方平台首次上网日期，不代表论文的发表时间）