Design and Fabrication of Integrated Waveguide Filter based on High-Resistivity Silicon

摘要：

　　A tri-cavity Chebyshev bandpass filter based on high resistivity silicon is proposed and manufactured at Ku-band.MEMS etching process is utilized to etch via-holes array on high resistivity silicon.A fabricated tri-cavity Chebyshev bandpass filter after being packaged exhibits an insertion loss of 3.7 dB with a 6.8%relative bandwidth at a center frequency of 16 GHz and the return loss is better than 15 dB in the passband.

关键词： siw filter high resistivity silicon MEMS etching relative bandwidth

作者: Lin Du Shi Pu

作者单位: Kay Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education Xidian University Xian,China

会议类型: 国际会议

会议名称: The 15th International Conference on Electronic Packaging Technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

会议地点: 成都

会议语种:英文

页码: 1407-1410

在线出版日期: 2014-08-12（万方平台首次上网日期，不代表论文的发表时间）