Semiconductor Plasmonic Nano-cavity Laser on Silicon: Simulation, Design and Fabrication
Plasmonic nano-cavity laser based on a III-V semiconductor nano-ring on silicon can operate either in in-plane dipole mode or vertical coaxial mode. This paper gives the simulation, design and some fabrication discussions of this unique nano-cavity laser. Body-of-revolution finite-difference-time-domain (BOR-FDTD) is used for the modal analysis and design of cavity. The spatial and temporal lasing performance of this nano-cavity laser is simulated incorporating the BOR-FDTD with multilevel gain medium model. Comparison between these two lasing modes is presented and numerical analysis shows that the in-plane dipole mode can achieve the smallest mode volume reported so far. Fabrication of this semiconductor plasmonic nano-cavity laser is discussed.This semiconductor plasmonic nano-cavity laser has a deep sub-wavelength foot-print and ultralow power consumption, which can act as an on-chip light source for intrachip data interconnect.
Qian Wang Chee Wei Lee Kim Peng Lim
Agency for Science, Technology and Research, Data Storage Institute5 Engineering Drive 1, 117608, Singapore
国际会议
Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)
广州
英文
329-332
2014-08-01（万方平台首次上网日期，不代表论文的发表时间）