Tunable V-cavity Semiconductor Laser and Modules
We present the principle, design, packaging and measurement results of widely tunable V-cavity lasers. By using a novel half-wave coupler, single-mode lasing with high side-mode-suppression-ratio is achieved. Single-electrode controlled wide-band wavelength tuning with Vernier effect is realized. The full-band tuning of 50 channels with 100 GHz spacing is demonstrated by further employing temperature induced gain spectrum shift. The laser is pack-aged into a small-form-factor 9-pin TOSA, and the electronic driver has been developed for the wavelength tuning and direct modulation. The advantages of compactness, fabrication simplicity, and easy wavelength control offer great potential for the tunable laser to be used in low-cost access and data center networks, as well as in portable devices for spectroscopic analysis.
Jian-Jun He Guoping Li Xiaohai Xiong Jianjun Meng Sen Zhang Xiaolu Liao Hongli Zhu Lin Wu Li Zou Lei Wang
State Key Laboratory of Modern Optical Instrumentation Centre for Integrated Optoelectronics, Depart Lightip Technologies (Hangzhou) Co. Ltd.11 Xiyuan Eighth Road, Suite D-502, Hangzhou 310030, China
国际会议
Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)
广州
英文
333-336
2014-08-01（万方平台首次上网日期，不代表论文的发表时间）