Study of Response of PIN Diode to Electromagnetic Pulse
Response of PIN diode is numerically simulated by a self-developed 2D semiconductor device simulation GSRES to study the response behavior of PIN diode limiter under electromagnetic pulse (EMP). Current overshoot phenomena of PIN diode during the rise time of EMP, which is validated to be due to the capacitive performance of PIN diode under high frequency, are analyzed. Shorter rise time of EMP causes higher current peak value. Overshoot current is affected by the impurity doping concentration of PIN diode. Higher doping concentration of impurity in the P layer and N layer causes higher peak of current and sooner attenuation of overshoot current. Doping concentration of the I layer affects the overshoot current too, but not as salient as concentration of the P and N layers. These results can be used in radiation hardening for PIN diode limiter.
Yong Li Haiyan Xie Chun Xuan Hongfu Xia Jian-Guo Wang
Northwest Institute of Nuclear Technology, Xian 710024, China Northwest Institute of Nuclear Technology, Xian 710024, China;School of Electronic and Information
国际会议
Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)
广州
英文
394-399
2014-08-01（万方平台首次上网日期，不代表论文的发表时间）