Validation Analysis and Test of Semiconductor Device Simulator

摘要：

　　Basic drift-diffusion model (DDM) of carriers in semiconductor using in a numerical simulator: General Semiconductor Radiation Effect Simulator (GSRES), is studied in order to identify and reduce the numerical errors of this semiconductor simulator. Numerical approximations of the semiconductor device EMP effect simulator is analysed. Numerical errors caused by approximation of the field distribution of lattice temperature, and approximation the of the recombination rate and generation rate are studied. Application range of this simulator is analysed according to the numerical errors caused by these approximations. Terms of the simulator that should be improved and enhanced precision are given.

作者: Yong Li Gong Ding Haiyan Xie Chun Xuan Hong-Fu Xia Jian-Guo Wang

作者单位: Northwest Institute of Nuclear Technology, Xian 710024, China Northwest Institute of Nuclear Technology, Xian 710024, China;School of Electronic and Information

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)

会议地点: 广州

会议语种:英文

页码: 1006-1011

在线出版日期: 2014-08-01（万方平台首次上网日期，不代表论文的发表时间）