Preparation Technique of AlN Piezoelectric Thin Film

摘要：

　　AlN piezoelectric thin films were prepared by DC magnetron reactive sputtering.A good c-axis orientation is essential for obtaining high piezoelectric coefficients.Therefore,the experiments were designed about the four parameters of the sputtering power,volume ratio of N2 and Ar,gas pressure,and substrate temperature,in order to make sure the deposition parameters of the c-axis orientation AlN film.The crystal structure and full width at half maximum(FWHM)of the thin films were analyzed by X-ray diffraction(XRD).The results show that the optimal process parameters were the sputtering power of 200 W,volume ratio of N2 and Ar of 2 : 8,gas pressure of 3.75 mT.The results provide the experiment evidence and process base for the next study.

作者: Guanbo Yin S.Imran Yungui Ma

作者单位: Department of Materials Science and Engineering Nanjing University of Science and Technology,Nanjing South China Academy of Advanced Optoelectronics South China Normal University,Guangzhou,China State Key Lab of Modern Optical Instrumentation Department of Optical Engineering,Zhejiang Universit

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)

会议地点: 广州

会议语种:英文

页码: 1604-1607

在线出版日期: 2014-08-01（万方平台首次上网日期，不代表论文的发表时间）